Promoting EUV Lithography via Workshops, Consulting & Education
This course provides attendees with a full overview of the fundamentals, status, and technical challenges of EUV Lithography. Topics covered include EUV Sources, EUV Source Metrology, EUV Optics, EUV systems and patterning, and EUV Mask. We will begin with an overview of the history of EUVL and cover EUV sources, EUV source metrology and EUV optics. Next is a discussion of EUVL systems and patterning. We cover the fundamental components of EUV systems and address similarities and differences to optical lithography systems. This section also covers patterning issues including flare, LER, and resist performance. We continue with an exploration of EUVL Mask technology issues such as design, materials including reflective multilayers, process and metrology. Finally, we conclude with a Status Review of EUVL.
Students are encouraged to purchase the texts,  EUV Lithography (2nd Edition, SPIE Press, 2018) directly from SPIE.
Course attendees will be able to increase their fundamental understanding of:
This short course is intended for anyone who is involved in the development of EUV Lithography and/or other emerging lithography techniques, needs to understand the current technology status of EUV Lithography, and is interested in learning the fundamentals of this leading NGL patterning technology. Those who are responsible for the development of the roadmap for lithography in manufacturing and making technology decisions as well as engineers and investors will find this course valuable.
Vivek Bakshi (EUV Litho, Inc.)
Dr. Vivek Bakshi is the founder and president of EUV Litho, Inc., an organization he formed in 2007 to promote EUV Lithography via consulting, workshops and education. Previously, he was a Senior Member of the Technical Staff in SEMATECHâs Lithography Division. Dr. Bakshi has published four books on EUVL: EUV Sources for Lithography (SPIE Press, 2006), EUV Lithography (SPIE Press and John Wiley, 2008), Extreme Ultraviolet Lithography (SPIE Press, 2012 (co-edited with Anthony Yen). His latest book EUV Lithography – 2nd Edition (SPIE Press, February 2018) is a best seller for SPIE press. His forthcoming book Photon Sources for Lithography and Metrology will be published by SPIE Press in 2022.
Jinho Ahn (Hanyang University)
Dr. Jinho Ahn joined Hanyang University in 1995 as a professor in the MSE department. He has been working as a national project leader for EUVL technology. He is now serving as a Director for Nano & Convergence Technology of National Research Foundation of Korea.
Patrick Naulleau (CXRO, LBL)
Dr. Patrick P. Naulleau has been involved in EUV lithography since 1997 when he joined Lawrence Berkeley National Laboratory (LBNL) to work in the area of actinic interferometric alignment. Since 2001 he has lead LBNLâs EUV Patterning project starting with the 0.1-NA ETS optics and now the 0.3-NA MET optic. He is internationally recognized for leading EUV patterning studies and his contributions to EUV System designs. He is the lead author of chapter on EUV Patterning in the book EUV Lithography.
Sascha Migura (Carl Zeiss) â Guest Instructor
Sascha Migura has been employed by Carl Zeiss SMT GmbH since finishing his PhD in physics in 2006 at the University of Bonn. He mainly worked on EUV lithography optics and was responsible for the optical designs of the StarlithÂź 3100 and StarlithÂź 3300. Sascha Migura was also Lead System Engineer of the pre-development of the High-NA EUV lithography optics.
This short course on EUV and Soft X-ray Sources will give an overview of underlying physics associated with EUVL and plasma sources. This short course will be taught by Prof. David Attwood (UC Berkeley), and Prof. Gerry OâSullivan (UC Dublin).
This short course is intended for anyone who is involved in the development of EUV Lithography and/or other emerging lithography or metrology techniques for lithography, biology or material science or any other applications that involve EUV or Soft X-ray photons. This course will help students understand the fundamentals, technology requirements, current and future trends. Those who are responsible for the development of the technology roadmaps and making technology decisions as well as students and engineers will find this course valuable.
Physics of EUV and Short Wavelength Sources with Focus on Atomic Physics (3+ Hours)
Instructor: Prof. Gerry OâSullivan, School of Physics, UCD, Dublin
This module will cover basic properties of laser produced and discharge produced plasmas and plasma models. We will review experimental factors determining plasma parameters and ion stage distributions, emission processes, line and continuum emission and UTA (unresolved transition array) emission. Topics covered also include: basic properties of H-like and He-like systems, coupling schemes and spectroscopic notation, transition probabilities and line intensities, calculations of atomic structure and spectra, complex spectra and UTAs, configuration interaction effects, opacity and radiation transport, UTA emission in sources for EUV and BEUV lithography, optimizing UTA emission, evolution of UTA emission with atomic number; implications for water-window operation, 3d-4f versus 4d-4f UTAs as water-window sources and a brief survey of short wavelength emission spectra.
Physics course: EUV/x-ray Interaction with Matter, sSources, Optics, and Applications (3+ Hours)
Instructor: Prof. David Attwood, University of California, BerkeleyÂ
This short course will provide a brief outline of several aspects of the underlying physics associated with extreme ultraviolet lithography (EUVL). Among these will be the basic mechanisms of EUV/x-ray interaction with matter, describing the interaction of short-wavelength electromagnetic radiation with electrons and atoms; electromagnetics at short wavelengths, including a simple but very useful, semi-classical formulation of refractive index, absorption, and reflection; EUV/x-ray optics and multilayer interference coatings, the enabling technology for EUV ; basic plasma physics and plasma parameters, a description of laser-plasma interactions and its importance as the power source for EUVL; spatial and temporal coherence at short wavelength; undulator radiation and the evolution to free electron lasers (FELs); and laser high harmonic generation (HHG). Applications sprinkled throughout will include nanoscale and solar scale imaging, and probing of atoms, molecules and solids on time scales extending from seconds to femtoseconds and attoseconds.
Gerry O’Sullivan
Gerry OâSullivan obtained his B. Sc. in Experimental Physics in 1975 from University College Dublin where he subsequently completed his PhD in atomic spectroscopy under the supervision of Prof. Kevin Carroll in 1980. After brief periods at NIST, the University of Maryland and a longer stint at Dublin City University, he returned to UCD as a lecturer in 1986 and was Head of the School of Physics from 2002 to 2008. He is currently an Emeritus Professor attached to the UCD School of Physics. His research interests include spectroscopy of laser produced plasmas, spectroscopy of ion gas collisions and the development of laser produced plasma based light sources for applications ranging from ionic photoabsorption studies to lithography and âwater windowâ microscopy. For the source development work his group have been involved in a number of very productive collaborations with both academic and industrial research groups in Ireland, the US, the Czech Republic, Germany, Italy, Poland, China and especially, Japan. For his contribution to research he was elected to Membership of the Royal Irish Academy in 2004. In 2018 he was presented with a Lifetime Achievement Award for his contribution to EUV source development by EUV Litho Inc.
David Attwood
David Attwood is Professor Emeritus at the University of California, Berkeley, and a member of the Nano-X group at Stanfordâs SLAC National Accelerator Laboratory. He received his PhD in Applied Physics from New York University in 1972. After his PhD, he joined Lawrence Livermore National Laboratory to work on laser fusion. He was the first scientific director of the Advanced Light Source (1985-1988) and the founding director of the Center for X-Ray Optics at Lawrence Berkeley National Laboratory, He co-founded the Applied Science and Technology (AS&T) PhD program at UC Berkeley. His interests involve x-ray optics, the generation of coherent radiation at EUV and x-ray wavelengths, and applications to nanoscale imaging. He is co-author with Anne Sakdinawat of the text âX-rays and Extreme Ultraviolet radiationâ (www.cambridge.org/xrayeuv).
This course provides attendees with a full overview of the fundamentals, status, and technical challenges of EUV Lithography. Topics covered include EUV Sources, EUV Source Metrology, EUV Optics, EUV Systems and Patterning, and EUV Mask. We will begin with an overview of the history of EUVL and cover EUV sources, EUV source metrology and EUV optics, followed by a discussion of EUVL systems and patterning. We will cover the fundamental components of EUV systems and address similarities and differences in optical lithography systems. This section also covers patterning issues, including flare, LER, and resist performance. We will continue with an exploration of EUVL Mask technology issues such as design, materials (including reflective multilayers), process and metrology. Finally, weâll conclude with a Status Review of EUVL.
Students are encouraged to purchase the text, EUV Lithography (2nd Edition, SPIE Press, 2018), directly from SPIE. After the short course concludes, a printed copy of the lecture notes can be provided at the cost of printing and shipping. If you are interested in getting a copy, please email us at info@euvlitho.com.
Course attendees will be able to increase their fundamental understanding of:
This short course is intended for anyone who is involved in the development of EUV Lithography and/or other emerging lithography techniques; needs to understand the current technology status of EUV Lithography; and is interested in learning the fundamentals of this leading NGL patterning technology. Those who are responsible for the development of the roadmap for lithography in manufacturing and making technology decisions, as well as engineers and investors, will find this course valuable.
Module 1: Introduction to EUVL (Vivek Bakshi, EUV Litho, Inc.)
Module 2: EUV Mask (Jinho Ahn, Hanyang University)
Module 3: EUV Sources (Vivek Bakshi, EUV Litho, Inc.)
Module 4: EUV Optics (Patrick Naulleau, CXRO, LBL)
Module 5: EUVL Patterning (Patrick Naulleau, CXRO, LBL)
EUV resists extendibility and shot noise
Module 6: EUVLÂ and High NA EUVL Scanner (Jan B.P. van Schoot, PhD (ASML))
Instructors for One-Day Short Course
Dr. Vivek Bakshi is the founder and president of EUV Litho, Inc., an organization he formed in 2007 to promote EUV Lithography via consulting, workshops and education. Previously, he was a Senior Member of the Technical Staff in SEMATECHâs Lithography Division. Dr. Bakshi has published four books on EUVL: EUV Sources for Lithography (SPIE Press, 2006), EUV Lithography (SPIE Press and John Wiley & Sons, 2008), Extreme Ultraviolet Lithography (SPIE Press, 2012 (co-edited with Anthony Yen). His latest book EUV Lithography – 2nd Edition (SPIE Press, February 2018) is a best seller for SPIE press. He is an internationally recognized expert on EUV Source Technology and EUV Lithography. He is the lead instructor for the course and the author of the EUV Source Technology chapter in the book EUV Lithography. His forthcoming book Photon Sources for Lithography and Metrology will be published by SPIEPress in 2022.
Dr. Jinho Ahn joined Hanyang University in 1995 as a professor in the MSE department. He has been working as a national project leader for EUVL technology. He is now serving as a Director for Nano & Convergence Technology of National Research Foundation of Korea.
Dr. Patrick P. Naulleau has been involved in EUV lithography since 1997 when he joined Lawrence Berkeley National Laboratory (LBNL) to work in the area of actinic interferometric alignment. Since 2001 he has lead LBNLâs EUV Patterning project starting with the 0.1-NA ETS optics and now the 0.3-NA MET optic. He is internationally recognized for leading EUV patterning studies and his contributions to EUV System designs. He is the lead author of the chapter on EUV Patterning in the book EUV Lithography.
Jan B.P. van Schoot, PhD, is Director of System Engineering and Technical Specialist at ASML, based in Veldhoven, The Netherlands.
After his study Electrical Engineering (Cum Laude) at Twente University of Technology. He received his PhD in Physics on the subject of non-linear optical waveguide devices in 1994 and held a post-doc position studying waveguide based electro-optical modulators.
He joined ASML in 1996 and was Project Leader for the Application of the first 5500/500 scanner and its successors up to 5500/750. In 2001 he became Product Development Manager of Imaging Products (DoseMapper, Customized Illumination). In 2007 he joined the dept of System Engineering. He was responsible for the Optical Columns of the 0.25NA and 0.33NA EUV systems. After this he worked on the design of the EUV source. He was the study leader of the High-NA EUV system and is now responsible for the High-NA optical train.
He is a Sr. Member of the SPIE, holds over 35 patents and presents frequently at conferences about photolithography.
In these lectures we will discuss EUV and x-ray sources, optics, and applications. In the source section we will describe the physics of undulator radiation, the extension to EUV and x-ray free electron lasers (FELs), and the physics of laser high harmonic generation (HHG). Regarding optics at these short wavelengths, we will describe important aspects of reflective optics, the very poor reflectivity at normal incidence, high reflectivity at glancing incidence, the critical angle, KB and Wölter optics. We will also describe EUV and x-ray multilayer coatings, and diffractive optics such as zone plates, gratings, and pinholes. Applications to materials science, the life sciences, cultural heritage, solar and astrophysics, CT scans on spatial scales of 10s nm to microns, EUV lithography, semiconductor diagnostics, and chemical dynamical studies at femtosecond and attosecond temporal resolution will be included in this short course.
Course attendees will be able to increase their fundamental understanding of following topics:
Intended Audience
This short course is intended for anyone who is involved in the development of EUV Lithography, other emerging lithography techniques and Nanoimaging Technologies for applications in and beyond semiconductor areas. Those who are responsible for the development of the roadmaps and making technology decisions, as well as engineers and investors, will find this course valuable.
David Attwood is Professor Emeritus at the University of California, Berkeley, and a member of the Nano-X group at Stanfordâs SLAC National Accelerator Laboratory. He received his PhD in Applied Physics from New York University in 1972. After his PhD, he joined Lawrence Livermore National Laboratory to work on laser fusion. He was the first scientific director of the Advanced Light Source (1985-1988) and the founding director of the Center for X-Ray Optics at Lawrence Berkeley National Laboratory, He co-founded the Applied Science and Technology (AS&T) PhD program at UC Berkeley. His interests involve x-ray optics, the generation of coherent radiation at EUV and x-ray wavelengths, and applications to nanoscale imaging. He is co-author with Anne Sakdinawat of the text âX-rays and Extreme Ultraviolet radiationâ (www.cambridge.org/xrayeuv).
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This course provides attendees with a full overview of the fundamentals, status, and technical challenges of EUV Lithography. Topics covered include EUV Sources, EUV Source Metrology, EUV Optics, EUV Systems and Patterning, and EUV Mask. We will begin with an overview of the history of EUVL and cover EUV sources, EUV source metrology and EUV optics, followed by a discussion of EUVL systems and patterning. We will cover the fundamental components of EUV systems and address similarities and differences in optical lithography systems. This section also covers patterning issues, including flare, LER, and resist performance. We will continue with an exploration of EUVL Mask technology issues such as design, materials (including reflective multilayers), process and metrology. Finally, weâll conclude with a Status Review of EUVL.
Students are encouraged to purchase the text, EUV Lithography (2nd Edition, SPIE Press, 2018), directly from SPIE. A printed copy of the lecture notes can be provided at the cost of printing and shipping, after the short course. If you are interested in getting a copy, please email us at info@euvlitho.com.
Course attendees will be able to increase their fundamental understanding of
This short course is intended for anyone who is involved in the development of EUV Lithography and/or other emerging lithography techniques; needs to understand the current technology status of EUV Lithography; and is interested in learning the fundamentals of this leading NGL patterning technology. Those who are responsible for the development of the roadmap for lithography in manufacturing and making technology decisions, as well as engineers and investors, will find this course valuable.
Module 1: Introduction to EUVL
Module 2: EUV Mask
Module 3: EUV Sources
Module 4: EUV Optics
Module 5: EUVL Patterning
Module 6: Summary
Vivek Bakshi (EUV Litho, Inc.)
Dr. Vivek Bakshi is the president of EUV Litho, Inc. an organization he has formed to promote EUV Lithography via consulting, publications, education and workshops. Previously he was a Senior Member of Technical staff in the Lithography Division of SEMATECH. He has edited two books on EUV Lithography: EUV Sources for Lithography (SPIE Press, 2006) and EUV Lithography (SPIE Press and John Wiley & Sons, Inc., 2008). He is an internationally recognized expert on EUV Source Technology and EUV Lithography. He is the lead instructor for the course and the author of the EUV Source Technology chapter in the book EUV Lithography.
Jinho Ahn (Hanyang University)
Dr. Jinho Ahn joined Hanyang University in 1995 as a professor in the MSE department. He has been working as a national project leader for EUVL technology. He is now serving as a Director for Nano & Convergence Technology of National Research Foundation of Korea.
Patrick Naulleau (CXRO, LBL)
Dr. Patrick P. Naulleau has been involved in EUV lithography since 1997 when he joined Lawrence Berkeley National Laboratory (LBNL) to work in the area of actinic interferometric alignment. Since 2001 he has lead LBNLâs EUV Patterning project starting with the 0.1-NA ETS optics and now the 0.3-NA MET optic. He is internationally recognized for leading EUV patterning studies and his contributions to EUV System designs. He is the lead author of chapter on EUV Patterning in the book EUV Lithography
In these lectures we will discuss EUV and x-ray sources, optics, and applications. In the source section we will describe the physics of undulator radiation, the extension to EUV and x-ray free electron lasers (FELs), and the physics of laser high harmonic generation (HHG). Regarding optics at these short wavelengths, we will describe important aspects of reflective optics, the very poor reflectivity at normal incidence, high reflectivity at glancing incidence, the critical angle, KB and Wölter optics. We will also describe EUV and x-ray multilayer coatings, and diffractive optics such as zone plates, gratings, and pinholes. Applications to materials science, the life sciences, cultural heritage, solar and astrophysics, CT scans on spatial scales of 10s nm to microns, EUV lithography, semiconductor diagnostics, and chemical dynamical studies at femtosecond and attosecond temporal resolution.Â
Course attendees will be able to increase their fundamental understanding of following topics:
This short course is intended for anyone who is involved in the development of EUV Lithography, other emerging lithography techniques and Nanoimaging Technologies for applications in and beyond semiconductor areas. Those who are responsible for the development of the roadmaps and making technology decisions, as well as engineers and investors, will find this course valuable.
David Attwood is Professor Emeritus at the University of California, Berkeley, and a member of the Nano-X group at Stanfordâs SLAC National Accelerator Laboratory. He received his PhD in Applied Physics from New York University in 1972. After his PhD, he joined Lawrence Livermore National Laboratory to work on laser fusion. He was the first scientific director of the Advanced Light Source (1985-1988) and the founding director of the Center for X-Ray Optics at Lawrence Berkeley National Laboratory, He co-founded the Applied Science and Technology (AS&T) PhD program at UC Berkeley. His interests involve x-ray optics, the generation of coherent radiation at EUV and x-ray wavelengths, and applications to nanoscale imaging. He is co-author with Anne Sakdinawat of the text âX-rays and Extreme Ultraviolet radiationâ (www.cambridge.org/xrayeuv).
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This short course on EUV and Soft X-ray Sources will give an overview of underlying physics associated with EUVL and plasma sources. Instructors for the short course are Prof. David Attwood (UC Berkeley), and Prof. Gerry OâSullivan (UCD).
2021 EUV Soft X-ray Sources Short Course Registration
This short course is intended for anyone who is involved in the development of EUV Lithography and/or other emerging lithography or metrology techniques for lithography, biology or material science or any other applications that involve EUV or Soft X-ray photons. This course will help students understand the fundamentals, technology requirements, current and future trends. Those who are responsible for the development of the technology roadmaps and making technology decisions as well as students and engineers will find this course valuable.
Detailed Course Outline
1. Physics of EUV and Short Wavelength Sources with Focus on Atomic Physics (Prof. Gerry OâSullivan, School of Physics, UCD, Dublin) (3+ Hours)
This module will cover basic properties of laser produced and discharge produced plasmas and plasma models. We will review experimental factors determining plasma parameters and ion stage distributions, emission processes, line and continuum emission and UTA (unresolved transition array) emission. Topics covered also include: basic properties of H-like and He-like systems, coupling schemes and spectroscopic notation, transition probabilities and line intensities, calculations of atomic structure and spectra, complex spectra and UTAs, configuration interaction effects, opacity and radiation transport, UTA emission in sources for EUV and BEUV lithography, optimizing UTA emission, evolution of UTA emission with atomic number; implications for water-window operation, 3d-4f versus 4d-4f UTAs as water-window sources and a survey of short wavelength emission spectra.
Module will cover:
2. Physics course: EUV/x-ray interaction with matter, sources, optics, and applications Prof. David Attwood, University of California, Berkeley (3+ Hours)
This short course will provide a brief outline of several aspects of the underlying physics associated with extreme ultraviolet lithography (EUVL). Among these will be the basic mechanisms of EUV/x-ray interaction with matter, describing the interaction of short-wavelength electromagnetic radiation with electrons and atoms; electromagnetics at short wavelengths, including a simple but very useful, semi-classical formulation of refractive index, absorption, and reflection; EUV/x-ray optics and multilayer interference coatings, the enabling technology for EUV ; basic plasma physics and plasma parameters, a description of laser-plasma interactions and its importance as the power source for EUVL; spatial and temporal coherence at short wavelength; undulator radiation and the evolution to free electron lasers (FELs); and laser high harmonic generation (HHG). Applications sprinkled throughout will include nanoscale and solar scale imaging, and probing of atoms, molecules and solids on time scales extending from seconds to femtoseconds and attoseconds.
This module will provide an overview of EUV Physics in the following areas:
Recommended Text Books
Instructorâs Bio
David Attwood
David Attwood is Professor Emeritus at the University of California, Berkeley, and a member of the Nano-X group at Stanfordâs SLAC National Accelerator Laboratory. He received his PhD in Applied Physics from New York University in 1972. After his PhD, he joined Lawrence Livermore National Laboratory to work on laser fusion. He was the first scientific director of the Advanced Light Source (1985-1988) and the founding director of the Center for X-Ray Optics at Lawrence Berkeley National Laboratory, He co-founded the Applied Science and Technology (AS&T) PhD program at UC Berkeley. His interests involve x-ray optics, the generation of coherent radiation at EUV and x-ray wavelengths, and applications to nanoscale imaging. He is co-author with Anne Sakdinawat of the text âX-rays and Extreme Ultraviolet radiationâ (www.cambridge.org/xrayeuv).Â
Gerry OâSullivan
Gerry OâSullivan obtained his B. Sc. in Experimental Physics in 1975 from University College Dublin where he subsequently completed his PhD in atomic spectroscopy under the supervision of Prof. Kevin Carroll in 1980. After brief periods at NIST, the University of Maryland and a longer stint at Dublin City University, he returned to UCD as a lecturer in 1986 and was Head of the School of Physics from 2002 to 2008. He is currently a Professor and director of the Atomic and Laser Physics Research (Spectroscopy) Group. His research interests include spectroscopy of laser produced plasmas, spectroscopy of ion gas collisions and the development of laser produced plasma based light sources for applications ranging from ionic photon absorption studies to lithography and âwater windowâ microscopy. For the source development work his group have been involved in a number of very productive collaborations with both academic and industrial research groups in Ireland, the US, the Czech Republic, Germany, Italy, Poland, China and especially, Japan. For his contribution to research he was elected to Membership of the Royal Irish Academy in 2004. In 2018 he was presented with a Lifetime Achievement Award for his contribution to EUV source development by EUV Litho Inc.
This course provides attendees with a full overview of the fundamentals, status, and technical challenges of EUV Lithography. Topics covered include EUV Sources, EUV Source Metrology, EUV Optics, EUV systems and patterning, and EUV Mask. We will begin with an overview of the history of EUVL and cover EUV sources, EUV source metrology and EUV optics. Next is a discussion of EUVL systems and patterning. We cover the fundamental components of EUV systems and address similarities and differences to optical lithography systems. This section also covers patterning issues including flare, LER, and resist performance. We continue with an exploration of EUVL Mask technology issues such as design, materials including reflective multilayers, process and metrology. Finally, we conclude with a Status Review of EUVL.
EUV Lithography Short Course (October 23rd, 2021) Registration
Students are encouraged to purchase the texts,  EUV Lithography (2nd Edition, SPIE Press, 2018) directly from SPIE. Printed copy of the lecture notes can be provided at the cost of printing and shipping, after the short course. If you are interested in getting a copy, please write to us at info@euvlitho.com.
Learning Outcomes
Course attendees will be able to increase their fundamental understanding of:
Intended Audience
This short course is intended for anyone who is involved in the development of EUV Lithography and/or other emerging lithography techniques, needs to understand the current technology status of EUV Lithography, and is interested in learning the fundamentals of this leading NGL patterning technology. Those who are responsible for the development of the roadmap for lithography in manufacturing and making technology decisions as well as engineers and investors will find this course valuable.
Detailed Course Outline (One Day Course)Â
Module 1: Introduction to EUVLÂ
Module 2: EUV Mask
Module 3: EUV Sources
Module 4: EUV Optics
Module 5: EUVL Patterning
Module 6: Summary
Instructors for One-Day Short Course
Dr. Vivek Bakshi is the founder and president of EUV Litho, Inc., an organization he formed in 2007 to promote EUV Lithography via consulting, workshops and education. Previously, he was a Senior Member of the Technical Staff in SEMATECHâs Lithography Division. Dr. Bakshi has published four books on EUVL: EUVSources forLithography(SPIE Press, 2006), EUV Lithography (SPIE Press and John Wiley, 2008), Extreme Ultraviolet Lithography (SPIE Press, 2012 (co-edited with Anthony Yen). His latest book EUV Lithography – 2nd Edition (SPIE Press, February 2018) is a best seller for SPIE press. His forthcoming book Photon Sources for Lithography and Metrology
will be published by SPIEPress in 2022.
Dr. Jinho Ahn joined Hanyang University in 1995 as a professor in the MSE department. He has been working as a national project leader for EUVL technology. He is now serving as a Director for Nano & Convergence Technology of National Research Foundation of Korea.
Dr. Patrick P. Naulleau has been involved in EUV lithography since 1997 when he joined Lawrence Berkeley National Laboratory (LBNL) to work in the area of actinic interferometric alignment. Since 2001 he has lead LBNLâs EUV Patterning project starting with the 0.1-NA ETS optics and now the 0.3-NA MET optic. He isinternationally recognized for leading EUV patterning studies and his contributions to EUV System designs. He is the lead author of chapter on EUV Patterning in the book EUV Lithography.
Sascha Migura has been employed by Carl Zeiss SMT GmbH since finishing his PhD in physics in 2006 at the University of Bonn. He mainly worked on EUV lithography optics and was responsible for the optical designs of the StarlithÂź 3100 and StarlithÂź 3300. Sascha Migura was also Lead System Engineer of the pre-development of the High-NA EUV lithography optics.