Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists.
This comprehensive volume is comprised of contributions from the world’s leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field.
Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology.
This comprehensive volume, edited by a senior technical staff member at SEMATECH, is the authoritative reference book on EUV source technology. The volume contains 38 chapters contributed by leading researchers and suppliers in the EUV source field. Topics range from a state-of-the-art overview and in-depth explanation of EUV source requirements, to fundamental atomic data and theoretical models of EUV sources based on discharge-produced plasmas (DPPs) and laser-produced plasmas (LPPs), to a description of prominent DPP and LPP designs and other technologies for producing EUV radiation. Additional topics include EUV source metrology and components (collectors, electrodes), debris mitigation, and mechanisms of component erosion in EUV sources. The volume is intended to meet the needs of both practitioners of the technology and readers seeking an introduction to the subject.
In the drive to maintain scaling of semiconductor devices according to Moore’s law, extreme-ultraviolet lithography (EUVL) is a leading candidate among next-generation lithography (NGL) technologies to succeed 193-nm optical lithography employing water immersion. Today, leading-edge semiconductor companies are manufacturing their final generation of devices using 193-nm immersion lithography with single patterning per layer. While device scaling is possible with double- or multiple-patterning immersion lithography, single-patterning NGL technologies will provide tighter overlay capability, better critical dimension uniformity, and potentially a lower cost. Currently, EUVL is being developed by these very companies for insertion into high volume manufacturing (HVM) within the next five years. This special collection of EUVL papers will ease the reader’s overwhelming task of sorting through volumes of technical papers to find good and original papers on specific topics of interest.
These selected papers were originally published in the Journal of Micro/Nanolithography, MEMS, and MOEMS and Proceedings of SPIE.